Detail

Sputter Depth Profiling

In sputter depth profiling the surface of a sample is measured with XPS or AES. Then ion sputtering or cluster ion sputtering is used to remove one defined layer. Then the analysis is repeated. By repeating these steps many times, an elemental depth profile of the sample can be restored.

This type of depth profiling is destructive. To make this method quantitative in depth scale, reference materials with defined film thicknesses have to be analyzed before. By this the sputtering time can be converted into sputter depth.

RELATED PRODUCTS

11

AEOLOS 150 AD-CMOS

High transmission wide angle hemispherical energy analyzer

COSCON LSIS

Power supply for IQE 12 LE

Power supply for IQE 12/38 ion source

AD-CMOS Detector

Adaptive Dimensions True Pulse Counting CMOS Detector

Differential Pumping for IQE 12/38

Differential Pumping for IQE 12/38

Quantitative Data Analysis for SpecsLab Prodigy

Power Supply for SPECS IQP 10/63 Ion Source

Penning Discharge Type Cold Cathode Ion Source

Extractor Type Scannable Ion Source

Extractor Type Low Energy Ion Source

SpecsLab Prodigy base application

APPLICATION NOTES

Fine Focus Scan-able Ion Source IQE 12/38

Fine Focus Scan-able Ion Source IQE 12/38

Applications of a focussed ion source

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