Detail

2D-CCD Detector

High Performance Analogue Detector System for ARPES and Imaging Application for PHOIBOS and KREIOS Analyzers

The 2D CCD detector is a state of the art analogue detection system for ARPES and imaging applications. It features a highly sensitive 2D CCD camera for data aquisition from a fast phosphorous screen. The electron signal is multiplied by a chevron stack MCP array.

KEY FEATURES

For PHOIBOS and KREIOS
MCP Chevron with 45 mm diameter
Fast P43 Phosphorous Screen
Lateral Resolution <100 µm

MADE FOR THESE METHODS
SPECIFICATIONS
RELATED PRODUCTS
APPLICATION NOTES
PUBLICATIONS
SPARE PARTS
DOWNLOADS

MADE FOR THESE METHODS

2

Angle-Resolved Photoelectron Spectroscopy detects the energy and angle distribution of photoelectrons to determine the electronic structure of solids.

Hard X-ray Photoelectron Spectroscopy can provide information about chemical composition in the bulk of a material, rather than in the surface.

SPECIFICATIONS

2D-CCD Detector

Operation

Number of Channels
Active Detector Area
Type of Detector
Compatible with
Operation Modes

Performance

Max. Count Rate
Linearity
Time Resolution
Noise
Typical Lateral Resolution
Frame Rate

Mounting

Mounting Flange

RELATED PRODUCTS

24

PHOIBOS 150 1D-DLD

High Performance XPS/UPS Analyzer with Delayline Detector

PHOIBOS 150 2D-CMOS/-CCD

The ARPES/XPS Analyzer with CMOS Detector and 150 mm Radius

PHOIBOS 150 2D-DLD

ARPES/XPS Analyzer with 2D-DLD Detector and 150 mm Radius

PHOIBOS 150 EP 1D-DLD

Energy Analyzer with 1D-DLD Detector for XPS/UPS up to 1mbar

PHOIBOS 150 EP 2D-CCD/CMOS

Energy Analyzer with 2D Detector for XPS/UPS up to 1mbar

PHOIBOS 150 EP 2D-DLD

Energy Analyzer with 2D-DLD Detector for XPS/UPS up to 1mbar

PHOIBOS 150 EP MCD

Energy Analyzer with MCD-9 Detector for XPS/UPS up to 1mbar

PHOIBOS 150 HV 1D-DLD

High Performance HAXPES Analyzer for up to 7 keV

PHOIBOS 150 HV 2D-CMOS/-CCD

2D CMOS High Voltage Energy Analyzer for HAXPES up to 7 keV

PHOIBOS 150 HV 2D-DLD

2D DLD High Voltage Energy Analyzer for HAXPES up to 7 keV

PHOIBOS 150 HV NAP 1D-DLD

Analyzer with 1D-DLD Detector for NAP-HAXPES Applications

PHOIBOS 150 HV NAP 2D-CCD/CMOS

Analyzer with 2D-CCD Detector for NAP-HAXPES Applications

PHOIBOS 150 HV NAP 2D-DLD

Analyzer with 2D-DLD Detector for NAP-HAXPES Applications

PHOIBOS 150 MCD

Robust XPS/UPS Analyzer with MCD Detector

PHOIBOS 150 with 2D-CMOS and 3D(2D) Spin Mott Detector

ARPES/Spin Analyzer with 2D-CMOS and 3D Mott Detector

PHOIBOS 150 Mott - MCD

UPS/Spin Analyzer with MCD and Mott Detector

PHOIBOS 150 NAP 1D-DLD

Energy Analyzer with 1D-DLD Detector for NAP Applications

PHOIBOS 150 NAP 2D-CMOS

Energy Analyzer with 2D-CMOS Detector for NAP Applications

PHOIBOS 150 NAP 2D-DLD

Energy Analyzer with 2D-DLD detector for NAP Applications

PHOIBOS 150 NAP MCD

Energy Analyzer with MCD-9 Detector for NAP Applications

ASTRAIOS 190 2D-CMOS

2D Momentum Mapping Electron Analyzer for ARPES

PHOIBOS 150 with 2D-CMOS and 3D(2D) Spin VLEED Detector

ARPES/Spin Analyzer with 2D-CMOS and VLEED Detector

PHOIBOS 150 WAL 2D-CMOS/-CCD

Super Wide Angle Analyzer for ARXPS with CMOS Detector

PHOIBOS 150 WAL 2D-DLD

Super Wide Angle Analyzer for ARXPS with 2D DLD Detector

APPLICATION NOTES

Resolving Power of the PHOIBOS Energy Analyzer Series

Resolving Power of the PHOIBOS Energy Analyzer Series

The line width of Xe and other rare gas levels using the SPECS gas cell UGC 10 and the SPECS UV-light source UVS 10/35 has been measured. The special geometry of the cell includes space charge compensation electrodes to demonstrate the ultimate energy resolution of the PHOIBOS analyzers.

Quantum Size Effects in uncoupled Al layers on graphitized SiC

Quantum Size Effects in uncoupled Al layers on graphitized SiC

track Quantum well states, measure 2D band structure, parallel component of wave vector, 2D spectrometer use

Measurements of the Surface State of Au (111)

Measurements of the Surface State of Au (111)

The band structure of the (111) surface of Au was measured by high-resolution angle-resolved photoelectron spectroscopy. The experiments were performed using a SPECS UV 10/35 source, which has an energy resolution of about 2 meV and a spot size of about 1.5 mm diameter. The photon energy for all measurements was 21.23 eV (He I).

Measurements of the Surface State of Cu (111)

Measurements of the Surface State of Cu (111)

The band structure of the (111) surface of Cu was measured by high-resolution angle-resolved photoelectron spectroscopy. The experiments were performed using a VG UV source, which has an energy resolution of about 2 meV and a spot size of about 1.5 mm diameter. The photon energy for all measurements was 21.23 eV (He I).

Fermi-edge of a single crystal TiTe2 sample at low temperature

Fermi-edge of a single crystal TiTe2 sample at low temperature

The Fermi-edge of a single crystal TiTe2sample was measured at low temperature. The diode closest to the sample read 12 K. A sample temperature of 17 K was estimated. The data was taken with a PHOIBOS 150 CCD analyzer at 3 eV pass energy and with 0.2 mm slit width.

Band Structure of Crystalline Graphite Layers on SiC (0001)

Band Structure of Crystalline Graphite Layers on SiC (0001)

The band structure of crystalline graphite layers on the (0001) surface of SiC was measured by high-resolution angle-resolved photoelectron spectroscopy. The experiments were performed using a SPECS UV source 10-35, which has an energy resolution of about 2 meV and a spot size of about 0.6 mm in diameter. The photon energy for all measurements were 40.81 eV (He II).

High Angular Resolution Data from the Band Structure of Thin Layers of Indium on Si(111)

High Angular Resolution Data from the Band Structure of Thin Layers of Indium on Si(111)

The band structure of thin layers of indium on Si(111) was measured with ARPES. Due to electron confinement in the direction perpendicular to the surface, quantum well states (QWS) are formed. The experiments were performed at the BESSY II 10 m NIM beamline at the U125/2 undulator, which has an energy resolution of less than 1 meV, and a small spot size.

Cross Section through the Brillouin Zone of Pb 2D Quantum Well State Bands

Cross Section through the Brillouin Zone of Pb 2D Quantum Well State Bands

Examining unexpected properties of Pb, a free electron metal

Overlayer Quantum Well States

Overlayer Quantum Well States

Angle-resolved one-photon photoemission was used to investigate angular resolved photoemission from Ag overlayers on Cu(111).

Two-Photon-Photoemission

Two-Photon-Photoemission

This Note shows the one- and two-photon photoemission signal of the Cu(111) surface state at 300 K for the different angular resolved lens modes of the PHOIBOS analyzer at different pass energies Ep. The surface has been analyzed using a PHOIBOS 150 analyzer with the 2D CCD Detector.

PUBLICATIONS

(2022) Fermiology and Origin of Tc Enhancement in a Kagome Superconductor Cs(V1 − xNbx)3Sb5
Kagome metals AV₃Sb₅ (A=K, Rb, and Cs) exhibit a characteristic superconducting ground state coexisting with a charge density wave (CDW), whereas the mechanisms of the superconductivity and CDW have yet to be clarified. Here we report a systematic angle-resolved photoemission spectroscopy (ARPES) study of Cs(V₁−_xNb_x)₃Sb₅ as a function of Nb content x, where isovalent Nb substitution causes an enhancement of superconducting transition temperature (T_c) and the reduction of CDW temperature (T_CDW). We found that the Nb substitution shifts the Sb-derived electron band at the Γ point downward and simultaneously moves the V-derived band around the M point upward to lift up the saddle point (SP) away from the Fermi level, leading to the reduction of the CDW-gap magnitude and T_CDW. This indicates a primary role of the SP density of states to stabilize the CDW. The present result also suggests that the enhancement of superconductivity by Nb substitution is caused by the cooperation between the expansion of the Sb-derived electron pocket and the recovery of the V-derived density of states at the Fermi level.

Takemi Kato, Yongkai Li, Kosuke Nakayama, Zhiwei Wang, Seigo Souma, Fumihiko Matsui, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Takashi Takahashi, Yugui Yao and Takafumi Sato
PHYSICAL REVIEW LETTERS 129, 206402 (2022)
Read more

SPARE PARTS

2

Product image

Product description

Article No.

Channelplates Set - 1 pair MCP 40

Spare channelplate set for all 40 mm CCD detectors

2060009045

Phosphor screen

Spare phosphor screen for all 40 mm CCD detectors. Exchange with channelplates is recommended.

2060008804

DOWNLOADS

2

2D-CCD Detector

2D CCD Detector — 2D detector for angle-resolved or spatially resolved studies with PHOIBOS hemispherical analyzers. Features a MCP Chevron/ phosphorous screen assembly and CCD camera sensor.

Please login to download this file

Adjustable Camera Support

Adjustable Camera Support — Camera support - adjustment of torsion angle, height and x-y-position.

Please login to download this file

Your web browser is deprecated

This could effect the presentation and some functions of our website.