PHOIBOS 150 2D-CMOS/-CCD

Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc.  Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the  photoemissionfinal states. Our soft-X-ray ARPES data on Ag metal reveals, however, that even at high excitation energies thefinal states can be a way more complex, incorporating several Bloch waves withdifferent out-of-plane momenta. Such multibandfinal states manifest themselves as a complex structure and added broadening of the spectral peaksfrom 3D electron states. We analyse the origins of this phenomenon, and trace
it to other materials such as Si and GaN. Ourfindings are essential for accurate determination of the 3D band structure over a wide range of materials andexcitation energies in the ARPES experiment.

Strong light fields have created opportunities to tailor novel functionalities of solids. Floquet–Bloch states can form under periodic driving of electrons and enable exotic quantum phases. On subcycle timescales, lightwaves can simultaneously drive intraband currents and interband transitions, which enable high-harmonic generation and pave the way towards ultrafast electronics. Yet, the interplay of intraband and interband excitations and their relation to Floquet physics have been key open questions as dynamical aspects of Floquet states have remained elusive. Here we provide this link by visualizing the ultrafast build-up of Floquet–Bloch bands with time-resolved and angle-resolved photoemission spectroscopy. We drive surface states on a topological insulator with mid-infrared fields—strong enough for high-harmonic generation—and directly monitor the transient band structure with subcycle time resolution. Starting with strong intraband currents, we observe how Floquet sidebands emerge within a single optical cycle; intraband acceleration simultaneously proceeds in multiple sidebands until high-energy electrons scatter into bulk states and dissipation destroys the Floquet bands. Quantum non-equilibrium calculations explain the simultaneous occurrence of Floquet states with intraband and interband dynamics. Our joint experiment and theory study provides a direct time-domain view of Floquet physics and explores the fundamental frontiers of ultrafast band-structure engineering.

The exciton, a bound state of an electron and a hole, is a fundamental quasiparticle induced by coherent light–matter interactions in semiconductors. When the electrons and holes are in distinct spatial locations, spatially indirect excitons are formed with a much longer lifetime and a higher condensation temperature. One of the ultimate frontiers in this field is to create long-lived excitonic topological quasiparticles by driving exciton states with topological properties, to simultaneously leverage both topological effects and correlation. Here we reveal the existence of a transient excitonic topological surface state (TSS) in a topological insulator, Bi₂Te₃. By using time-, spin- and angle-resolved photoemission spectroscopy, we directly follow the formation of a long-lived exciton state as revealed by an intensity buildup below the bulk-TSS mixing point and an anomalous band renormalization of the continuously connected TSS in the momentum space. Such a state inherits the spin-polarization of the TSS and is spatially indirect along the z axis, as it couples photoinduced surface electrons and bulk holes in the same momentum range, which ultimately leads to an excitonic state of the TSS. These results establish Bi₂Te₃ as a possible candidate for the excitonic condensation of TSSs and, in general, opens up a new paradigm for exploring the momentum space emergence of other spatially indirect excitons, such as moiré and quantum well excitons, and for the study of non-equilibrium many-body topological physics.

In recent years, various doping methods for epitaxial graphene have been demonstrated through atom substitution and adsorption. Here we observe by angle-resolved photoemission spectroscopy (ARPES) a coupling-induced Dirac cone renormalization when depositing small amounts of Ti onto epitaxial graphene on SiC. We obtain a remarkably high doping efficiency and a readily tunable carrier velocity simply by changing the amount of deposited Ti. First-principles theoretical calculations show that a strong lateral (non-vertical) orbital coupling leads to an efficient doping of graphene by hybridizing the 2pz orbital of graphene and the 3d orbitals of the Ti adsorbate, which attached on graphene without creating any trap/scattering states. This Ti-induced hybridization is adsorbate-specific and has major consequences for efficient doping as well as applications towards adsorbate-induced modification of carrier transport in graphene.

We report on an application of a simultaneous perturbation stochastic approximation (SPSA) algorithm to filtering systematic noise (SN) with nonzero mean value in photoemission data. In our analysis, we have used a series of 50 single-scan photoemission spectra of W(110) surface where different SNs were added. It was found that the SPSA-evaluated spectrum is in good agreement with the spectrum measured without SN. On the basis of our results, a wide application of SPSA algorithm for evaluation of experimental data is anticipated.

We report on angle-resolved photoemission studies of the electronic π states of high-quality epitaxial graphene layers on a Ni(111) surface. In this system the electron binding energy of the π states shows a strong dependence on the magnetization reversal of the Ni film. The observed extraordinarily large energy shift up to 225 meV of the graphene-derived π band peak position for opposite magnetization directions is attributed to a manifestation of the Rashba interaction between spin-polarized electrons in the π band and the large effective electric field at the graphene/Ni interface. Our findings show that an electron spin in the graphene layer can be manipulated in a controlled way and have important implications for graphene-based spintronic devices.