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PCS-ECR-AN

Microwave Frequency Atom Plasma Cracker Source for Nitrogen or Reducing Gases for Most Demanding MBE Applications

The microwave atom plasma source for nitrogen or reducing gases PCS-ECR-AN is a fully UHV compatible component for most demanding MBE applications and surface modifications, suitable for a wide range of vacuum levels (UHV to HV). Microwaves with a frequency of 2.45 GHz are generated by a microwave magnetron and coupled into the plasma chamber, where a plasma is excited and the microwaves absorbed. The plasma density is enhanced by the magnetron cyclotron resonance effect, provided by a 86 mT magnetic quadrupole arranged around the plasma chamber. The electrons undergo electron cyclotron resonance (ECR) motion, which greatly enhances the electron path length and therefore the probability of collision with other molecules and subsequent ionisation. A specially designed aperture inhibits the release of ions from the plasma while allowing neutral nitrogen atoms to effuse out. The particles emitted from the source are largely thermalized ( <1 eV) and therefore, this plasma source is suitable for sensitive samples.

The source is fully bakeable, with an all-welded stainless steel vacuum envelope, and outstanding cooling from a full length water-jacket.With additional sets of the user-exchangeable apertures and extraction grids, the source can be easily reconfigured for oxidizing gases, as a downstram plasma source or as a dedicated atom or ion source.

KEY FEATURES

  • Filamentless design permits operation with reactive gases.
  • Unique integrated shutter and current monitor option.
  • Trivial bakeout preparation ~1 minute
  • Integral water cooling jacket

MADE FOR THESE METHODS

1

SPECIFICATIONS

PCS-ECR-AN
Operation
Working Principle

Microwave assisted plasma source

E-beam power

250 W max. at 2.45 GHz

Gas Flow Rate

< 0.1 sccm to 100 sccm (mode dependant)

Operating Modes

Atom mode

Operating Pressure

< 10-7 - 10-5 mbar

Optional Accessories
  • Integrated shutter
  • Various aperture types
  • Differential pumping
  • Ion trap: Deflects residual ion current out of the beam
  • Faraday cup: Provides the possibility to monitor the beam current
Mounting
Mounting Flange

NW63CF (4.5 ")

Insertion Depth

300 mm

Performance
Spot Size

~25 mm at source

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SPARE PARTS

4
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Product description
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Silicon heat conducting paste

Silicon heat conducting paste for PCS-ECR 25g5W/mK, QC-WLP-CQ-08

2060014932

DOWNLOADS

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